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Numéro de référence | H7N1002LD | ||
Description | Silicon N Channel MOS FET High Speed Power Switching | ||
Fabricant | Renesas Technology | ||
Logo | |||
H7N1002LD, H7N1002LS, H7N1002LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1131-0700
(Previous: ADE-208-1573E)
Rev.7.00
Apr 07, 2006
Features
• Low on-resistance
www.DataSheet4U.cRoDmS (on) = 8 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N1002LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N1002LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N1002LM
S
Rev.7.00 Apr 07, 2006 page 1 of 8
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Pages | Pages 9 | ||
Télécharger | [ H7N1002LD ] |
No | Description détaillée | Fabricant |
H7N1002LD | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N1002LM | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N1002LS | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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