DataSheetWiki


H7N1002LD fiches techniques PDF

Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence H7N1002LD
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





1 Page

No Preview Available !





H7N1002LD fiche technique
H7N1002LD, H7N1002LS, H7N1002LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1131-0700
(Previous: ADE-208-1573E)
Rev.7.00
Apr 07, 2006
Features
Low on-resistance
www.DataSheet4U.cRoDmS (on) = 8 mtyp.
Low drive current
Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N1002LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N1002LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N1002LM
S
Rev.7.00 Apr 07, 2006 page 1 of 8

PagesPages 9
Télécharger [ H7N1002LD ]


Fiche technique recommandé

No Description détaillée Fabricant
H7N1002LD Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
Renesas Technology
H7N1002LM Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
Renesas Technology
H7N1002LS Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
Renesas Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche