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PDF H7P1002DL Data sheet ( Hoja de datos )
| Número de pieza | H7P1002DL | |
| Descripción | Silicon P Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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H7P1002DL, H7P1002DS
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 85 mΩ typ.
www.DataSheet•4U.cLoomw drive current
• 4.5 V gate drive device can driven from 5 V source
REJ03G1601-0100
Rev.1.00
Nov 16, 2007
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
D
123
H7P0601DL
123
H7P0601DS
G
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Rating
–100
±20
–15
–60
–15
–12
14.4
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 1 of 8
1 page  
H7P1002DL, H7P1002DS
Reverse Drain Current vs.
Source to Drain Voltage
–20
–15
–10 V
–10
–5 V
VGS = 0, 5 V
–5
www.DataSheet4U.com
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
IAP = –12 A
VDD = –50 V
16 duty < 0.1 %
Rg ≥ 50 Ω
12
8
4
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.01
0.03 1shot pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Vin
–15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 5 of 8
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet H7P1002DL.PDF ] | |
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| H7P1002DS | Silicon P Channel MOS FET High Speed Power Switching | Renesas Technology |
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