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Numéro de référence | H7P0601DL | ||
Description | Silicon P Channel MOS FET High Speed Power Switching | ||
Fabricant | Renesas Technology | ||
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1 Page
H7P0601DL, H7P0601DS
Silicon P Channel MOS FET
High Speed Power Switching
www.DataSheet4U.com Features
• Low on-resistance
RDS(on) = 40 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source
Outline
REJ03G0044-0100Z
Rev.1.00
Aug.05.2003
D
G
S
DPAK-2
4
DPAK-S
4
12 3
12 3
H7P0601DS
H7P0601DL
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Aug.05.2003, page 1 of 10
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Pages | Pages 11 | ||
Télécharger | [ H7P0601DL ] |
No | Description détaillée | Fabricant |
H7P0601DL | Silicon P Channel MOS FET High Speed Power Switching | Renesas Technology |
H7P0601DS | Silicon P Channel MOS FET High Speed Power Switching | Renesas Technology |
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