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Número de pieza | BCR8PM-14L | |
Descripción | Triac Medium Power Use | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCR8PM-14L (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! BCR8PM-14L
Triac
Medium Power Use
Features
• IT (RMS) : 8 A
• VDRM : 700 V
www.DataSheet•4U.cIFoGmTI, IRGTI, IRGTⅢ : 30 mA (20 mA)Note5
• Viso : 2000 V
Outline
TO-220F
12 3
REJ03G0308-0100
Rev.1.00
Aug.20.2004
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yellow Card No. E223904
File No. E80271
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
14
700
840
Unit
V
V
Rev.1.00, Aug.20.2004, page 1 of 7
1 page BCR8PM-14L
www.DataSheet4U.com
Holding Current vs.
Junction Temperature
103
7 Typical Example
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
Junction Temperature (°C)
Commutation Characteristics
3 Typical Example Main Voltage
Time
2 Tj = 125°C
(dv/dt)c
VD
102 IT = 4A
7 τ = 500µs
5 VD = 200V
Main Current
IT
(di/dt)c
τ Time
3 f = 3Hz
2
101
7
5 Minimum
3 Characteristics
2 Value
I Quadrant
100 III Quadrant
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Decay of On-State
Commutating Current (A/ms)
Rev.1.00, Aug.20.2004, page 5 of 7
Latching Current vs.
Junction Temperature
103
7
5
3
2 Distribution T2+, G–
102 Typical Example
7
5
3
2
101
7
5
3
2
T2+, G+
T2–, G–
Typical Example
100
–40
0
40 80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140 Tj = 125°C
120
100
80
60 III Quadrant
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7 Typical Example
5
4
IFGT I
3 IRGT I
2 IRGT III
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
Gate Current Pulse Width (µs)
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BCR8PM-14L.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCR8PM-14 | MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor |
BCR8PM-14L | Triac Medium Power Use | Renesas Technology |
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