|
|
PDF BB504C Data sheet ( Hoja de datos )
| Número de pieza | BB504C | |
| Descripción | Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BB504C (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
BB504C
Built in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
REJ03G0836-0600
(Previous ADE-208-983D)
Rev.6.00
Aug.10.2005
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
www.DataSheet•4U.cLoomw noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
Notes:
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Marking is “DS–”.
2. BB504C is individual type number of RENESAS BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
Rev.6.00 Aug 10, 2005 page 1 of 9
1 page  
BB504C
Maximum Channel Power
Dissipation Curve
200
150
100
50
www.DataSheet4U.com
0 50 100 150 200
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 120 kΩ
16
12
4V
3V
2V
8
4
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Power Gain vs. Gate Resistance
40
35
30
25
20
VDS = 5 V
15
VG1 = 5 V
VG2S = 4 V
f = 200 MHz
10
10 20 50
100 200
500 1000
Gate Resistance RG (kΩ)
Rev.6.00 Aug 10, 2005 page 5 of 9
Typical Output Characteristics
20
VG2S = 4 V
VG1 = V
16
12
8
180
220
kΩ
kΩ
4
0 1 2345
Drain to Source Voltage VDS (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
VDS = 5 V
RG = 120 kΩ
24 f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Noise Figure vs. Gate Resistance
4
VDS = 5 V
VG1 = 5 V
3 VG2S = 4 V
f = 200MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance RG (kΩ)
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BB504C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BB504C | Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier |  Hitachi Semiconductor |
| BB504C | Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier | Renesas Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |