(PDF) IRG4PC40UDPBF Datasheet - INSULATED GATE BIPOLAR TRANSISTOR

Número de pieza	IRG4PC40UDPBF
Descripción	INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes	International Rectifier
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No Preview Available ! PD - 94937 IRG4PC40UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode www.DataSheet4U.com • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free Benefits • Generation -4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs www.irf.com 1 1/12/04 1 page www.DataSheet4U.com IRG4PC40UDPbF www.irf.com 5 5 Page Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ www.DataSheet4U.com 11 Page

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PDF IRG4PC40UDPBF Data sheet ( Hoja de datos )