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PDF NE461M02 Data sheet ( Hoja de datos )
| Número de pieza | NE461M02 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER | |
| Fabricantes | NEC | |
| Logotipo |  |
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NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY NE461M02
LOW DISTORTION AMPLIFIER
FEATURES
• HIGH COLLECTOR CURRENT:
250 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
www.DataSheet42U7.cdoBmm TYP at 1 GHz
• HIGH IP3:
37 dBm TYP at 1 GHz
DESCRIPTION
The NE461M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE461M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.5±0.1
1.6±0.2
1.5±0.1
C
EB E
0.42
±0.06
0.42
±0.06
1.5 0.45
±0.06
3.0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.25±0.02
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
ICBO
IEBO
hFE2
|S21E|2
NF1
NF2
IM2
IM3
Collector Cutoff Current at VCB = 20 V, IE = 0
Emitter Cutoff Current at VEB = 2 V, IC = 0
DC Current Gain at VCE = 10 V, IC = 50 mA
Insertion Power Gain at VCE = 10 V, IC = 50 mA, f = 1 GHz
Noise Figure 1 at VCE = 10 V, IC = 50 mA, f = 500 MHz3
Noise Figure 2 at VCE = 10 V, IC = 50 mA, f = 1 GHz3
2nd Order Intermodulation Distortion
VCE = 10 V, IC = 50 mA, Rs = RL = 75 Ω
Pin = 105 dB µV/75 Ω, f1 = 190 MHz
f2 = 90 MHz, f = f1 - f2
3rd Order Intermodulation Distortion
VCE = 10 V, IC = 50 mA, Rs = RL = 75 Ω
Pin = 105 dB µV/75 Ω, f1 = 190 MHz
f2 = 200 MHz, f = 2 x f1 - f2
µA
µA
dB
dB
dB
dB
dB
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Rs = RL = 50 Ω, tuned.
NE461M02
2SC5337
M02
MIN TYP MAX
0.01 5.0
0.03 5.0
40 120 200
7.0 8.3
1.5 3.5
2.0 3.5
59.0
82.0
California Eastern Laboratories
1 page  
NE461M02
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
j25 j100
j10
S22
3 GHz
S11
3 GHz
00
-j10 S11
S22
0.1 GHz
0.1 GHz
www.DataSheet4U.com
-j25
-j50
-j100
120˚
150˚
90˚
S21
0.1 GHz
60˚
30˚
Coordinates in Ohms
Frequency in GHz
VCE = 12 V, IC = 100 mA
180˚
-150˚
S21
3 GHz
0˚
S12
3 GHz
S12
0.1 GHz
-30˚
-120˚
-60˚
-90˚
NE461M02
VCE = 10 V, IC = 100 mA
FREQUENCY
S11
GHz
MAG
ANG
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.596
0.601
0.601
0.600
0.597
0.593
0.588
0.581
0.574
0.565
0.556
0.547
0.535
0.524
0.515
0.505
-144.8
-166.5
177.5
168.1
160.4
153.6
147.2
141.2
135.3
129.6
124.1
118.7
113.0
107.5
101.8
96.1
S21
MAG
ANG
23.959
12.575
6.386
4.296
3.258
2.640
2.236
1.953
1.747
1.590
1.468
1.371
1.292
1.225
1.170
1.122
106.7
93.9
82.7
75.0
68.3
62.1
56.3
50.8
45.6
40.6
35.8
31.1
26.6
22.3
18.1
14.1
S12
MAG
0.029
0.040
0.066
0.093
0.120
0.147
0.174
0.201
0.227
0.252
0.277
0.302
0.325
0.348
0.371
0.393
ANG
48.5
55.6
63.6
65.3
64.7
63.1
60.9
58.5
55.9
53.1
50.3
47.4
44.3
41.3
38.2
35.1
S22
MAG
ANG
0.422
0.334
0.308
0.306
0.309
0.313
0.318
0.324
0.330
0.335
0.341
0.346
0.351
0.355
0.359
0.363
-108.4
-135.7
-152.0
-156.5
-157.7
-157.8
-157.4
-156.6
-155.7
-154.9
-154.2
-153.5
-153.0
-152.8
-152.8
-153.0
K
0.56
0.82
0.99
1.04
1.06
1.06
1.06
1.06
1.05
1.05
1.04
1.03
1.02
1.02
1.01
1.00
MAG1
(dB)
29.2
25.0
19.9
15.4
12.9
11.0
9.5
8.4
7.5
6.7
6.1
5.5
5.1
4.7
4.4
4.2
VCE = 12 V, IC = 100 mA
FREQUENCY
S11
GHz
MAG
ANG
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.596
0.598
0.597
0.595
0.592
0.588
0.583
0.576
0.568
0.560
0.550
0.540
0.530
0.520
0.510
0.502
-143.1
-165.5
178.0
168.4
160.6
153.7
147.3
141.3
135.5
129.9
124.4
119.0
113.5
107.9
102.3
96.7
S21
MAG
ANG
24.061
12.640
6.417
4.313
3.268
2.647
2.241
1.957
1.750
1.593
1.471
1.373
1.294
1.228
1.172
1.123
106.9
94.0
82.7
74.9
68.2
62.0
56.2
50.7
45.5
40.5
35.6
31.0
26.4
22.1
17.9
13.8
S12
MAG
0.029
0.040
0.065
0.093
0.120
0.147
0.173
0.199
0.225
0.250
0.275
0.300
0.323
0.346
0.369
0.391
ANG
48.3
55.1
63.0
64.8
64.3
62.8
60.7
58.3
55.8
53.1
50.2
47.4
44.3
41.3
38.2
35.0
S22
MAG
ANG
0.416
0.328
0.301
0.299
0.302
0.306
0.312
0.318
0.324
0.330
0.336
0.342
0.347
0.353
0.357
0.362
-107.7
-135.1
-151.6
-156.2
-157.4
-157.4
-156.9
-156.1
-155.2
-154.3
-153.5
-152.8
-152.3
-152.0
-151.9
-152.2
K
0.56
0.82
0.99
1.04
1.06
1.07
1.07
1.07
1.06
1.05
1.04
1.03
1.03
1.02
1.01
1.01
MAG1
(dB)
29.3
25.0
19.9
15.4
12.8
11.0
9.5
8.3
7.4
6.6
6.0
5.5
5.0
4.6
4.4
4.1
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -12/98
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| PDF Descargar | [ Datasheet NE461M02.PDF ] | |
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