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PDF SD56120M Data sheet ( Hoja de datos )

Número de pieza SD56120M
Descripción RF POWER TRANSISTORS
Fabricantes STMicroelectronics 
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No Preview Available ! SD56120M Hoja de datos, Descripción, Manual

SD56120M
RF POWER Transistors, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
Excellent thermal stability
Common source configuration Push-pull
POUT = 120W with 13dB gain @ 860MHz / 32V
BeO free package
Internal input matching
Description
The SD56120M is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD56120M is designed for high
gain and broadband performance operating in
common source mode at 32 V. Its internal
matching makes it ideal for TV broadcast
applications requiring high linearity.
M252
Epoxy sealed
Pin connection
12
3
54
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
Order codes
Part number
SD56120M
Package
M252
Branding
SD56120M
July 2006
Rev 10
1/14
www.st.com
14

1 page




SD56120M pdf
SD56120M
3 Impedances
Figure 1. Current conventions
Impedances
Note:
Table 5. Impedance data
Freq. (MHz)
860 MHz
ZIN ()
5.57 + j 3.488
Measured drain to drain and gate to gate respectively.
ZDL()
4.21 - j 2.88
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5 Page





SD56120M arduino
SD56120M
5 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/14

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