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ON Semiconductor - NPN Darlington Silicon Power Transistor

Numéro de référence 2N6056
Description NPN Darlington Silicon Power Transistor
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2N6056 fiche technique
ON Semiconductort
NPN Darlington Silicon Power
Transistor
. . . designed for general–purpose amplifier and low frequency
switching applications.
High DC Current Gain —
hFE = 3000 (Typ) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min)
www.DataSheet4U.Lcoomw Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc
= 3.0 Vdc (Max) @ IC = 8.0 Adc
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRange
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Indicates JEDEC Registered Data
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Max
80
80
5.0
8.0
16
120
100
0.571
–65 to +200
Symbol
RθJC
Max
1.75
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
_C
Unit
_C/W
100
2N6056
ON Semiconductor Preferred Device
DARLINGTON
8 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
100 WATTS
CASE 1–07
TO–204AA
(TO–3)
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
2N6056/D

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