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JMnic - Silicon NPN Power Transistor

Numéro de référence 2N6355
Description Silicon NPN Power Transistor
Fabricant JMnic 
Logo JMnic 





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2N6355 fiche technique
JMnic
Silicon NPN Power Transistors
DESCRIPTION
With TO-3 package
High DC current gain
DARLINGTON
APPLICATIONS
For general-purpose amplifier and
www.DataSheet4U.lcoowm-frequency switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N6355
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
50
40
5
20
0.5
150
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.09
UNIT
/W

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