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2N6356 fiches techniques PDF

JMnic - Silicon NPN Power Transistor

Numéro de référence 2N6356
Description Silicon NPN Power Transistor
Fabricant JMnic 
Logo JMnic 





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2N6356 fiche technique
SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For general-purpose amplifier and
www.DataSheet4Ul.ocowm-frequency switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N6356
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
50
40
5
20
0.5
150
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.09
UNIT
/W

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