DataSheetWiki


GBU805 fiches techniques PDF

Taiwan Semiconductor Company - (GBU80x) Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

Numéro de référence GBU805
Description (GBU80x) Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers
Fabricant Taiwan Semiconductor Company 
Logo Taiwan Semiconductor Company 





1 Page

No Preview Available !





GBU805 fiche technique
GBU801 THRU GBU807
Features
Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
GBU
UL Recognized File # E-96005
Ideal for printed circuit board
Reliable low cost construction
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Surge overload rating to 200 amperes peak
www.DataSheet4U.comHigh temperature soldering guaranteed:
260OC / 10 seconds / .375”, (9.5mm) lead
lengths.
Mechanical Data
Case: Molded plastic body.
Terminals: Plated leads solderable per
MIL-STD-750, Method 2026.
Weight: 0. 3 ounce, 8.0 grams
Mounting torque: 5 in. lb. Max.
.020R(TYP.)
.310(7.90)
.290(7.40)
.880(22.3)
.860(21.8)
.160(4.1)
.140(3.5)
.085(2.16)
.065(1.65)
.075
(1.9)R
0.125(3.2)x45
CHAMFER
.740(18.8)
.080(2.03) .720(18.3)
.060(1.52)
.100(2.54)
.085(2.16)
.080(2.03)
.065(1.65)
.710(18.0)
.050(1.27) .690(17.5)
.040(1.02)
.190(4.83)
.210(5.33)
.140(3.56)
.130(3.30)
9
TYP.
.085(2.16)
.075(1.90)
.022(0.56)
.018(0.46)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol GBU GBU GBU GBU GBU GBU GBU Units
801 802 803 804 805 806 807
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@TC = 100
VDC
I(AV)
50 100 200 400 600 800 1000 V
8.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load IFSM
(JEDEC method )
200
A
Maximum Instantaneous Forward Voltage
1.0 V
@ 8.0A
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=125
Rating for fusing (t<8.3ms)
VF
IR
I2t
5.0 uA
500 uA
166 A2sec
Typical Thermal Resistance Per Leg (Note 1)
(Note 2)
RθJA
RθJC
21.0 /W
2.0
Typical Junction Capacitance (Note 3)
Cj
211
94 pF
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to + 150
Notes 1: Units Mounted In Free Air No Heat Sink On PCB 0.5x0.5 “ (12x12mm) Copper Pads,
0.375”(9.5mm) Lead Length.
2: Units Case Mounted On 4" x 6" x 0.25" AL. Plate Heat Sink.
3. Measured at 1.0 MHZ and applied Reverse Voltage of 4.0V.
- 670 -

PagesPages 2
Télécharger [ GBU805 ]


Fiche technique recommandé

No Description détaillée Fabricant
GBU8005 8.0A GLASS PASSIVATED BRIDGE RECTIFIER Diodes Incorporated
Diodes Incorporated
GBU8005 (GBU8xx) GLASS PASSIVATED BRIDGE RECTIFIERS HY ELECTRONIC
HY ELECTRONIC
GBU8005 (GBU8005 - GBU810) 8.0Amp Glass Passivited Bridge Rectifiers SeCoS
SeCoS
GBU8005 (GBU8005 - GBU810) 8.0A GLASS PASSIVATED BRIDGE RECTIFIER Luguang Electronic
Luguang Electronic

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche