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11DQ06 fiches techniques PDF

Nihon Inter Electronics Corporation - Low Forward Voltage drop Diode

Numéro de référence 11DQ06
Description Low Forward Voltage drop Diode
Fabricant Nihon Inter Electronics Corporation 
Logo Nihon Inter Electronics Corporation 





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11DQ06 fiche technique
SBD Type :11DQ06
FEATURES
* Miniature Size
* Low Forward Voltage drop
* Low Power Loss, High Efficiency
* High Surge Capability
* 30 Volts thru 100 Volts Types Available
* 52mm Inside Tape Spacing Package Available
OUTLINE DRAWING
www.DataSheet4U.cMomaximum Ratings
Approx Net Weight:0.32g
Rating
Symbol
11DQ06
Unit
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Without Fin or
Average Rectified P.C.Board
Output Current P.C.Board
mounted
RMS Forward Current
VRRM
VRSM
IO
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range Tjw
Storage Temperature Range
Tstg
Electrical Thermal Characteristics
0.89
1.0
25
60
65
Ta=25°C*
Ta=54°C*
50Hz Half Sine
Wave Resistive Load
1.57
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
V
V
A
A
A
°C
°C
Characteristics
Symbol
Conditions
Min. Typ. Max.
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance (Junction to Ambient)
*:Print Lands=5x5mm,Both Sides
IRM
VFM
Rth(j-a)
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 1.0A
Without Fin or P.C.Board
P.C.Board mounted
-
-
-
-1
- 0.55
-
130
81
Unit
mA
V
°C/W

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