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Numéro de référence | LH28F016SA | ||
Description | 16M (1M bb 16/ 2M bb 8) Flash Memory | ||
Fabricant | Sharp Electrionic Components | ||
Logo | |||
1 Page
LH28F016SA
FEATURES
• User-Configurable x8 or x16 Operation
• User-Selectable 3.3 V or 5 V VCC
• 70 ns Maximum Access Time
• 0.43 MB/sec Write Transfer Rate
• 100,000 Erase Cycles per Block
• 32 Independently Lockable Blocks (64K)
• Revolutionary Architecture
– Pipelined Command Execution
– Write During Erase
– Command Superset of
Sharp LH28F008SA
• 50 µA (Typ.) ICC in CMOS Standby
• 1 µA (Typ.) Deep Power-Down
• State-of-the-Art 0.55 µm ETOX™ Flash
Technology
• 56-Pin, 1.2 mm × 14 mm × 20 mm
TSOP (Type I) Package
16M (1M × 16, 2M × 8) Flash Memory
56-PIN TSOP
TOP VIEW
3/5
CE1
NC
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0
VPP
RP
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56 WP
55 WE
54 OE
53 RY/BY
52 DQ15
51 DQ7
50 DQ14
49 DQ6
48 GND
47 DQ13
46 DQ5
45 DQ12
44 DQ4
43 VCC
42 GND
41 DQ11
40 DQ3
39 DQ10
38 DQ2
37 VCC
36 DQ9
35 DQ1
34 DQ8
33 DQ0
32 A0
31 BYTE
30 NC
29 NC
28F016SAT-1
Figure 1. TSOP Configuration
1
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Pages | Pages 30 | ||
Télécharger | [ LH28F016SA ] |
No | Description détaillée | Fabricant |
LH28F016SA | 16M (1M bb 16/ 2M bb 8) Flash Memory | Sharp Electrionic Components |
LH28F016SANS | 16 Mbit(1 Mbit x 16/ 2 Mbit x 8) | Sharp Electrionic Components |
LH28F016SANS-70 | 16 Mbit(1 Mbit x 16/ 2 Mbit x 8) | Sharp Electrionic Components |
LH28F016SC-L | 16 M-bit (2 MB x 8) SmartVoltage Flash Memories | Sharp Electrionic Components |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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