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PDF 5STP45Q2200 Data sheet ( Hoja de datos )
| Número de pieza | 5STP45Q2200 | |
| Descripción | Phase Control Thyristor | |
| Fabricantes | ABB | |
| Logotipo |  |
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VDSM = 2800 V
ITAVM = 5490 A
ITRMS = 8625 A
ITSM = 75000 A
VT0 = 0.86 V
rT = 0.070 mΩ
Phase Control Thyristor
5STP 45Q2800
Doc. No. 5SYA1050-01 Sep.00
www.DataSh•eetP4Ua.ctoemnted free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
Blocking
Part Number
VDRM VRRM
VRSM1
IDRM
IRRM
dV/dtcrit
5STP 45Q2800
2800 V
3000 V
5STP 45Q2600
2600 V
2800 V
≤ 400 mA
≤ 400 mA
1000 V/µs
5STP 45Q2200 Conditions
2200 V
f = 50 Hz, tp = 10ms
2400 V
tp = 5 ms, single pulse
VDRM
VRRM Tj = 125°C
@ Exp. to 0.67xVDRM
Mechanical data
FM Mounting force
nom.
min.
max.
a Acceleration
Device unclamped
Device clamped
m Weight
DS Surface creepage distance
Da Air strike distance
90 kN
81 kN
108 kN
50 m/s2
100 m/s2
2.1 kg
36 mm
15 mm
ABB Semiconductors AG reserves the right to change specifications without notice.
1 page  
5STP 45Q2800
www.DataSheet4U.com
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
Turn –off time, typical parameter relationship.
Fig. 12 tq/tq1 = f1(Tj)
Fig. 13 tq/tq1 = f2(-di/dt)
Fig. 14 tq/tq1 = f3(dv/dt)
tq = tq1 • tq/tq1 f1(Tj) • tq/tq1 f2(-di/dt) • tq/tq1 f3(dv/dt) tq1 :at normalized values (see page 2)
tq : at varying conditions
ABB Semiconductors AG reserves the right to change specifications without notice.
5 of 6
Doc. No. 5SYA1050-01 Sep.00
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 5STP45Q2200.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 5STP45Q2200 | Phase Control Thyristor | ABB |
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