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PDF P2103NV Data sheet ( Hoja de datos )
| Número de pieza | P2103NV | |
| Descripción | N- & P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Niko | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de P2103NV (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2103NV
SOP-8
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 21mΩ
P-Channel -30 35mΩ
www.DataSheet4U.com
ID
7A
-6A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
7 -6
6 -5 A
28 -24
2
W
1.3
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 0.8 1.5 2.5
P-Ch -0.8 -1.5 -2.5
V
1 OCT-22-2003
1 page  
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2103NV
SOP-8
www.DataSheet4U.com
5 OCT-22-2003
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet P2103NV.PDF ] | |
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