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LH28F004SU-Z1 fiches techniques PDF

Sharp Electrionic Components - 4M (512K bb 8) Flash Memory

Numéro de référence LH28F004SU-Z1
Description 4M (512K bb 8) Flash Memory
Fabricant Sharp Electrionic Components 
Logo Sharp Electrionic Components 





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LH28F004SU-Z1 fiche technique
LH28F004SU-Z1
4M (512K × 8) Flash Memory
FEATURES
512K × 8 Word Configuration
5 V Write/Erase Operation (5 V VPP)
– No Requirement for DC/DC Converter
to Write/Erase
100 ns Maximum Access Time
32 Independently Lockable Blocks (16K)
100,000 Erase Cycles per Block
Automated Byte Write/Block Erase
– Command User Interface
– Status Register
– RY /» BY » Status Output
System Performance Enhancement
– Erase Suspend for Read
– Two-Byte Write
– Full Chip Erase
Data Protection
– Hardware Erase/Write Lockout during
Power Transitions
– Software Erase/Write Lockout
Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect
Set/Reset)
5 µA (Typ.) ICC in CMOS Standby
0.2 µA (Typ.) Deep Power-Down
State-of-the-Art 0.55 µm ETOX™ Flash
Technology
40-pin, 1.2 mm × 10 mm × 20 mm TSOP
(Type I) Package
40-PIN TSOP
TOP VIEW
A16
A15
A14
A13
A12
A11
A9
A8
WE
RP
VPP
RY/BY
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40 A17
39 GND
38 NC
37 NC
36 A10
35 DQ7
34 DQ6
33 DQ5
32 DQ4
31 VCC
30 VCC
29 NC
28 DQ3
27 DQ2
26 DQ1
25 DQ0
24 OE
23 GND
22 CE
21 A0
28F004SUT-Z1-1
Figure 1. TSOP Configuration
1

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