DataSheetWiki


HAT2183WP fiches techniques PDF

Renesas Technology - Silicon N Channel Power MOS FET Power Switching

Numéro de référence HAT2183WP
Description Silicon N Channel Power MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





1 Page

No Preview Available !





HAT2183WP fiche technique
HAT2183WP
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
Low drive current
www.DataSheet4U.cHoimgh density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G0530-0500
Rev.5.00
Oct 21, 2005
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
150
±30
20
40
20
40
20
30
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.5.00, Oct 21, 2005, page 1 of 6

PagesPages 7
Télécharger [ HAT2183WP ]


Fiche technique recommandé

No Description détaillée Fabricant
HAT2183WP Silicon N Channel Power MOS FET Power Switching Renesas Technology
Renesas Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche