|
|
PDF HAT2174H Data sheet ( Hoja de datos )
| Número de pieza | HAT2174H | |
| Descripción | Silicon N Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HAT2174H (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
HAT2174H
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 8 V gate drive
• Low drive current
www.DataSheet•4U.cHoimgh density mounting
• Low on-resistance
RDS(on) = 21 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
1 234
5
D
4
G
SSS
123
REJ03G0041-0400
Rev.4.00
Dec 11, 2006
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
100
±20
20
80
20
20
40
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.4.00 Dec 11, 2006 page 1 of 7
1 page  
HAT2174H
Reverse Drain Current vs.
Source to Drain Voltage
20
16
10 V
12
VGS = 0
8 5V
www.DataSheet4U.com
4
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
IAP= 20 A
40 VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
30
20
10
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.01
0.02
0.01
1shot
pulse
10 µ
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 6.25°C/ W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.4.00 Dec 11, 2006 page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HAT2174H.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HAT2174H | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |