(PDF) HAT2169N Datasheet - Silicon N Channel Power MOS FET Power Switching

Número de pieza	HAT2169N
Descripción	Silicon N Channel Power MOS FET Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! HAT2169N Silicon N Channel Power MOS FET Power Switching Features • High speed switching www.DataSheet•4U.cCoampable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline LFPAK-i 5678 DDDD 4 G 1(S) 2(S) 3(S) 4(G) SSS 12 3 8(D) 7(D) 6(D) 5(D) 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Preliminary Rev.0.01 May.29.2005 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 40 ±20 50 200 50 30 72 30 4.17 150 – 55 to + 150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.0.01, May.29.2005, page 1 of 3 1 page

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PDF HAT2169N Data sheet ( Hoja de datos )