DataSheetWiki


JAN2N930 fiches techniques PDF

Microsemi Corporation - NPN Transistor

Numéro de référence JAN2N930
Description NPN Transistor
Fabricant Microsemi Corporation 
Logo Microsemi Corporation 





1 Page

No Preview Available !





JAN2N930 fiche technique
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
www.DataSheet4U.com
2N930
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/0C above TA = +250C
2) Derate linearly 4.0 mW/0C above TC = +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
Symbol
RθJC
Value
45
60
6.0
30
300
600
-55 to +200
Units
Vdc
Vdc
Vdc
mAdc
mW
0C
Max.
97
Unit
0C/W
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
V(BR)CEO
VCB = 60 Vdc
VCB = 45 Vdc
Emitter-Base Cutoff Current
ICBO
VEB = 6.0 Vdc
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc
Collector-Base Cutoff Current
VCE = 5.0 Vdc
IEBO
ICES
ICEO
Min. Max.
Unit
45 Vdc
µAdc
10 ηAdc
10
µAdc
10
5.0
ηAdc
2.0 ηAdc
2.0 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

PagesPages 2
Télécharger [ JAN2N930 ]


Fiche technique recommandé

No Description détaillée Fabricant
JAN2N930 NPN Transistor Microsemi Corporation
Microsemi Corporation

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche