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PDF JAN2N1711 Data sheet ( Hoja de datos )
| Número de pieza | JAN2N1711 | |
| Descripción | NPN LOW POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
www.DataSheet4U.com
2N1711
2N1890
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Impedance
1) Derate linearly 4.57 mW/0C for TA > 250C
2) Derate linearly 17.2 mW/0C for TC > 250C
Symbol
VCBO
VEBO
IC
PT
TJ, Tstg
Symbol
ZθJX
2N1711 2N1890
75 100
7.0
500
0.8
3.0
-65 to +200
Max.
58
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc
2N1711, S
2N1890, S
V(BR)CBO
Collector-Emitter Breakdown Voltage
RBE = 10 Ω, IC = 100 mAdc
2N1711, S
2N1890, S
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
2N1711, S
2N1890, S
V(BR)CEO
Emitter-Base Breakdown Voltage
IE = 100 µAdc
Collector-Base Cutoff Current
V(BR)EBO
VCB = 60 Vdc
2N1711
ICBO
VCB = 80 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
2N1890
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
mAdc
W
W
0C
Unit
0C/W
TO-5*
*See appendix A for package
outline
Min. Max.
Unit
75 Vdc
100
50 Vdc
80
30 Vdc
60
7.0 Vdc
10 ηAdc
10
5.0 ηAdc
120101
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| PDF Descargar | [ Datasheet JAN2N1711.PDF ] | |
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