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PDF SB073P125-W-AG Data sheet ( Hoja de datos )
| Número de pieza | SB073P125-W-AG | |
| Descripción | Schottky Barrier Diode Wafer | |
| Fabricantes | TRANSYS Electronics Limited | |
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SB073P125-W-Ag/Al
Schottky Barrier Diode Wafer
73 Mils, 125 Volt, 5 Amp
www.DataSheet4U.com
Features
Oxide Passivated Junction
Low Forward Voltage
150 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Platinum Barrier
Data Sheet
1. Solderable Surface Ti/Ni/Ag - Suffix "Ag"
2. Wire Bond Surface Aluminium - Suffix "Al"
Anode
Solderable
Surface Ti/Ni/Ag
Cathode
Cathode
Symbol
Electrical Characteristics @ 25 C
Maximum Repetitive Reverse Voltage (2)
Maximum Forward Voltage (1)(2)
Typical Average Forward Rectified Current (2)
Reverse Leakage Current (2)
Reverse Leakage Current @ 125 C (2)
Junction Operating Temperature Range (2)
Storage Temperature Range (2)
Symbol Unit
VRRM
VF
IF(AV)
IR
IR
TJ
TSG
Volt
Volt
Amp
µA
mA
C
C
(1) Pulse Width tp = < 300µS, Duty Cycle <2%
(2) The characteristics above assume the die are assembled in
indusry standard packages using appropriate attach methods.
SB073P125-W-Ag/Al (See ordering code below)
125
0.78
5
10
5
-65 to +150
-65 to +150
Ordering Code
SB040P150-W-Ag
Schottky Barrier 40 Mils Pt Barrier 150 Volt Wafer Ti/Ni/Ag
Wafer
Mechanical Dimensions
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - Ti/Ni/Ag (Suffix "Ag")
or Aluminium (Suffix "Al")
Bottom (cathode) Ti/Ni/Ag
64.5
(1.63)
64.5
(1.63)
The information in this datasheet does not form part of any contract, quotation
guarantee,warranty or representation, it has been produced in good faith and is believed to
be accurate and may be changed without notice at anytime. Liability will not be accepted by
Transys Electronics LTD for any consequences whatsoever in its use. This publication does
not convey nor imply any license under patent or other intellectual/industrial property rights.
The products within this specification are not designed for use in any life support
apparatus whatsoever where malfunction can be reasonably expected to cause personal
injury or death. Customers using these products in the aforementioned applications do so at
their own risk and agree to fully indemnify Transys Electronics LTD for any damage/ legal
fees either direct, incidental or consequential from this improper use or sale.
Third Angle Protection
Die
73
(1.85)
420 +/- 20 µm
73
(1.85)
Dimensions in mils (mm)
Transys Electronics LTD
Birmingham UK.
Email: [email protected]
Website: www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
Fax: + 44 (0) 121 776 6997
SCD0900-1
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| SB073P125-W-AG | Schottky Barrier Diode Wafer | TRANSYS Electronics Limited |
| SB073P125-W-AL | Schottky Barrier Diode Wafer | TRANSYS Electronics Limited |
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