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Datasheet K3918-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
K39 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K390 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0  Knox Inc diode | | |
| 2 | K3903 | N-Channel MOSFET, 2SK3903 2SK3903
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3903
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10  Toshiba Semiconductor data | | |
| 3 | K3911 | Field Effect Transistor 2SK3911
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)
2SK3911
Switching Regulator Applications
• • • • • Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low l  Toshiba transistor | | |
| 4 | K3918 | N-Channel MOSFET, 2SK3918 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3918
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3918 is N-channel MOS FET device that
ORDERING INFORMATION
PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK)
features a low on-state resistance and excelle  NEC data | | |
| 5 | K3919 | N-Channel MOSFET, 2SK3919 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as NEC data | | |
| 6 | K3934 | N-Channel MOSFET, 2SK3934
2SK3934
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVI)
2SK3934
Switching Regulator Applications
• • • • Low drain-source ON resistance: R DS (ON) = 0.23ƒ¶ (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.) Low leakage current: IDSS Toshiba Semiconductor data | | |
| 7 | K3936 | N-Channel MOSFET, 2SK3936 2SK3936
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI)
2SK3936
Switching Regulator Applications
Unit: mm
• Small gate charge: Qg = 60 nC (typ.)
• Fast reverse recovery time: trr = 380 ns (typ.) • Low drain-source ON-resistance: RDS (ON) = Toshiba data | |
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