DataSheetWiki


S0402xH fiches techniques PDF

ST Microelectronics - Sensitive Gate SCR

Numéro de référence S0402xH
Description Sensitive Gate SCR
Fabricant ST Microelectronics 
Logo ST Microelectronics 





1 Page

No Preview Available !





S0402xH fiche technique
® S0402xH
SENSITIVE GATE SCR
FEATURES
www.DataSheet4U.coITm(RMS) = 4A
VDRM = 200V to 800V
Low IGT < 200 µA
DESCRIPTION
The S0402xH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications where low gate sensitivity is required.
K
A
G
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RM S)
IT( AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
Tc= 110°C
Mean on-state current
(180° conduction angle)
Tc= 110°C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 10 mA diG /dt = 0.1 A/µs.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Value
4
2.5
55
50
12.5
100
- 40, + 150
- 40, + 125
260
Unit
A
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C RGK = 1K
Voltage
Unit
B DMN
200 400 600 800 V
January 1995
1/5

PagesPages 5
Télécharger [ S0402xH ]


Fiche technique recommandé

No Description détaillée Fabricant
S0402xH Sensitive Gate SCR ST Microelectronics
ST Microelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche