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PDF FPD7612 Data sheet ( Hoja de datos )
| Número de pieza | FPD7612 | |
| Descripción | GENERAL PURPOSE PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
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GENERAL PURPOSE PHEMT
FPD7612
Datasheet v3.0
FEATURES:
• 20.5 dBm Output Power (P1dB)
• 13 dB Power Gain at 12 GHz
• 17 dB Maximum Stable Gain at 12 GHz
• 11 dB Maximum Stable Gain at 18 GHz
• 45% Power-Added Efficiency
LAYOUT:
GENERAL DESCRIPTION:
www.DataSheet4U.cTohme FPD7612 is an AlGaAs/InGaAs
pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25 µm by
200 µm Schottky barrier gate, defined by high
-resolution stepper-based photolithography.
The recessed gate structure minimizes
parasitics to optimize performance. The
epitaxial structure and processing have been
optimized for reliable high-power applications.
ELECTRICAL SPECIFICATIONS1:
TYPICAL APPLICATIONS:
• Narrowband and broadband high-
performance amplifiers
• SATCOM uplink transmitters
• PCS/Cellular low-voltage high-efficiency
output amplifiers
• Medium-haul digital radio transmitters
PARAMETER
Power at 1dB Gain Compression
Power Gain at P1dB
Noise FIgure
Power-Added Efficiency
Maximum Stable Gain (S21/S12)
f = 12 GHz
f = 24 GHz
Saturated Drain-Source Current
Maximum Drain-Source Current
SYMBOL
P1dB
G1dB
CONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
MIN TYP MAX
19 20.5
11.0 13.0
UNITS
dBm
dB
N.F. min
PAE
MSG
IDSS
IMAX
VDS = 5 V; IDS = 50% IDSS
VDS = 5V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
16
9.5
45
1.2
45
17
11
60
120
75
dB
%
dB
mA
mA
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
Thermal Resistivity (see Notes)
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
θJC
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.2 mA
IGS = 0.2 mA
IGD = 0.2 mA
VDS > 3V
VDS > 6V
0.7
12.0
14.5
80
1
1.0
14.0
16.0
280
20
10
1.3
mS
µA
V
V
V
°C/W
°C/W
Note:1 TAmbient = 22°C; RF specifications measured at f = 12 GHz using CW signal
Tel: +44 (0) 1325 301111
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FPD7612.PDF ] | |
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