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PDF FPD750SOT89 Data sheet ( Hoja de datos )
| Número de pieza | FPD750SOT89 | |
| Descripción | LOW NOISE HIGH LINEARITY PACKAGED PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
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FPD750SOT89
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet 3.0
FEATURES (1.85GHZ):
• 25 dBm Output Power (P1dB)
• 18 dB Small-Signal Gain (SSG)
• 0.6 dB Noise Figure
• 39 dBm Output IP3
• 55% Power-Added Efficiency
• FPD750SOT89E: RoHS compliant
(Directive 2002/95/EC)
www.DataSheet4U.com
GENERAL DESCRIPTION:
The FPD750SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 750 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The double recessed
gate structure minimizes parasitics to optimize
performance, with an epitaxial structure
designed for improved linearity over a range of
bias conditions and i/p power levels.
PACKAGE:
RoHS
9
TYPICAL APPLICATIONS:
• Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
• High intercept-point LNAs
• WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Power at 1dB Gain Compression
Small-Signal Gain
P1dB
SSG
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
23 25
16.5 18
dBm
dB
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
PAE
NF
IP3
IDSS
IMAX
GM
IGSO
|VP|
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
50
0.8 1.0
0.6
%
dB
36 38
39
dBm
185
230 280
mA
375 mA
200 mS
1 15 µA
0.7 1.0 1.3 V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
12 16
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
12 16
Thermal Resistance
RθJC
83
Note: TAMBIENT = 22°C; RF specification measured at f = 1850 MHz using CW signal (except as noted)
V
V
°C/W
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
1 page  
FPD750SOT89
Datasheet v3.0
TYPICAL OUTPUT PLANE POWER CONTOURS (VDS = 5v, IDS = 50%IDSS):
www.DataSheet4U.com
1850 MHz
Contours swept with a constant input power, set so that
optimum P1dB is achieved at the point of output match.
Input (Source plane) Γs:
0.50 ∠ 142.8º
0.37 + j0.35 (normalized)
18.5 + j17.5 Ω
Nominal IP3 performance is obtained with this input
plane match, and the output plane match as shown.
FPD750SOT89 POWER CONTUORS 900MHz
Swp Max
151
3.0
4.0
5.0
10.0
-0.2
-0.4
25dBm
24dBm
23dBm
22dBm
19dBm
20dBm
21dBm
Swp Min
1
900 MHz
Contours swept with a constant input power, set so that
optimum P1dB is achieved at the point of output match.
Input (Source plane) Γs:
0.79 ∠ 36.9º
1.0 + j 2.6(normalized)
50 + j130 Ω
Nominal IP3 performance is obtained with this input
plane match, and the output plane match as shown.
TYPICAL SCATTERING PARAMETERS (50Ω SYSTEM):
FPD750SOT89 5V / 50%IDSS
Swp Max
8GHz
4 GHz
3.5 GHz
5 GHz
6 GHz
7 G3H.0z
4.0
5.0
3 GHz
10.0
2.5 GHz
-0.2 2 GHz
-0.4 1.5 GHz
S11
1 GHz
Swp Min
0. 5GHz
FPD750SOT89 5V / 50%IDSS
Swp Max
8GHz
3.0
4.0
5.0
6 GHz
5 GHz
4 GHz
7 GHz
10.0
3 GHz
2 GHz
-0.2 1 GHz
S22
-0.4
Swp Min
0. 5GHz
Tel: +44 (0) 1325 301111
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
5 Page 
PACKAGE OUTLINE:
(dimensions in millimeters – mm)
www.DataSheet4U.com
FPD750SOT89
Datasheet v3.0
TAPE DIMENSIONS AND PART ORIENTATION:
● Also available with horizontal
part orientation
● Hub diameter = 80mm
● Devices per reel = 1000
Tel: +44 (0) 1325 301111
11
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
11 Page | ||
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