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FPD750SOT343 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Filtronic Compound Semiconductors - LOW NOISE HIGH LINEARITY PACKAGED PHEMT

شماره قطعه FPD750SOT343
شرح مفصل LOW NOISE HIGH LINEARITY PACKAGED PHEMT
تولید کننده Filtronic Compound Semiconductors 
آرم Filtronic Compound Semiconductors 


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FPD750SOT343 شرح
FPD750SOT343
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
PACKAGE:
FEATURES (1850MHZ):
0.5 dB N.F.min.
20 dBm Output Power (P1dB)
16.5 dB Small-Signal Gain (SSG)
37 dBm Output IP3
RoHS compliant (Directive 2002/95/EC)
Datasheet v3.0
ROHS:
9
GENERAL DESCRIPTION:
www.DataSheet4U.cTohme FPD750SOT343 is a packaged depletion
mode pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 µm x 750
µm Schottky barrier Gate. The Filtronic
0.25µm process ensures class-leading noise
performance. The use of a small footprint
plastic package allows for cost effective
system implementation.
TYPICAL APPLICATIONS:
802.11a,b,g and WiMax LNAs
PCS/Cellular High Linearity LNAs
Other types of wireless infrastructure systems.
TYPICAL PERFORMANCE1:
RF PARAMETER
SYMBOL
Power at 1dB Gain Compression
OP1dB
Small Signal Gain
SSG
CONDITIONS
VDS = 3.3 V; IDS = 40mA
VDS = 3.3 V; IDS = 40mA
0.9GHZ 1.85GHZ 2.6GHZ 3.5GHZ UNITS
20 19 20 20.5 dBm
22 16.5 14
11 dB
Power-Added Efficiency
Maximum Stable Gain (|S21/S12|)
Noise Figure
Output Third-Order Intercept Point
POUT = 9 dBm per Tone
PAE
MSG
N.F.
OIP3
VDS = 3.3 V; IDS = 40mA
POUT = P1dB
VDS = 3.3 V; IDS = 40mA
VDS = 3.3 V; IDS = 40mA
VDS = 3.3V; IDS = 40mA
VDS = 3.3V; IDS = 80mA
50
24
0.5
32
35
45 45
20 18
0.6 0.7
31 31
37 35
50 %
16 dB
0.8 dB
32
dBm
38
ELECTRICAL SPECIFICATIONS2:
RF/DC PARAMETER
SYMBOL
Frequency
f
Power at 1dB Gain Compression
P1dB
Small Signal Gain
SSG
Saturated Drain-Source Current
IDSS
Transconductance
GM
Pinch-Off Voltage
|VP|
Gate-Source Breakdown Voltage
|VBDGS|
Gate-Drain Breakdown Voltage
|VBDGD|
Thermal Resistivity (see Notes)
θJC
CONDITIONS
VDS = 3.3 V; IDS = 40mA
VDS = 3.3 V; IDS = 40mA
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
VDS > 3V
MIN
17
16
185
0.7
13
13
TYP
2.0
230
200
1.0
16
18
143
MAX
280
1.3
UNITS
GHz
dBm
dB
mA
mS
V
V
V
°C/W
Note: 1. Based on measured data taken on applications circuits. 2. All devices are 100% RF and DC tested at
2GHz with ZS = ZL = 50 Ohms 3. TAMBIENT = 22°C
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com

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