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FPD750 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Filtronic Compound Semiconductors - 0.5W POWER PHEMT

شماره قطعه FPD750
شرح مفصل 0.5W POWER PHEMT
تولید کننده Filtronic Compound Semiconductors 
آرم Filtronic Compound Semiconductors 


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FPD750 شرح
0.5W POWER PHEMT
FPD750
Datasheet v3.0
FEATURES:
27.5 dBm Linear Output Power at 12 GHz
11.5 dB Power Gain at 12 GHz
14.5 dB Max Stable Gain at 12 GHz
38 dBm Output IP3
50% Power-Added Efficiency
LAYOUT:
GENERAL DESCRIPTION:
www.DataSheet4U.cTohme FPD750 is an AlGaAs/InGaAs
pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25 µm by
750 µm Schottky barrier gate, defined by high-
resolution stepper-based photolithography.
The double recessed gate structure minimizes
parasitics to optimize performance. The
epitaxial structure and processing have been
optimized for reliable high-power applications.
The FPD750 also features Si3N4 passivation
and is available in the low cost plastic SOT89
SOT343 and DFN packages.
TYPICAL APPLICATIONS:
Narrowband and broadband high-
performance amplifiers
SATCOM uplink transmitters
PCS/Cellular low-voltage high-efficiency
output amplifiers
Medium-haul digital radio transmitters
ELECTRICAL SPECIFICATIONS1:
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Power at 1dB Gain Compression
P1dB
VDS = 8 V; IDS = 50% IDSS
26.5 27.5
dBm
Maximum Stable Gain (S21/S12)
MSG
VDS = 8 V; IDS = 50% IDSS
13.5 14.5
dB
Power Gain at P1dB
G1dB
VDS = 8 V; IDS = 50% IDSS
10.5 11.5
dB
Power-Added Efficiency
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
PAE
IP3
VDS = 8 V; IDS = 50% IDSS; POUT = P1dB
VDS = 8V; IDS = 50% IDSS
Matched for optimal power; Tuned for best IP3
45
38
40
%
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
185 230
280
mA
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
VDS > 6V
12.0
14.5
370
200
10
1.0
14.0
16.0
65
mA
mS
µA
V
V
V
°C/W
Note: 1TAmbient = 22°C; RF specifications measured at f = 12 GHz using CW signal
Tel: +44 (0) 1325 301111
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com

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