39VF080 Datasheet PDF - SST
| Part Number | 39VF080 | |
| Description | SST39VF080 | |
| Manufacturers | SST | |
| Logo |  |
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8 Mbit (x8) Multi-Purpose Flash
SST39LF080 / SST39VF080
FEATURES:
SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories
EOL Data Sheet
• Organized as 1M x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF080
– 2.7-3.6V for SST39VF080
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
www.DataSheet4U(.ctyompical values at 14 MHz)
– Active Current: 12 mA (typical)
– Standby Current: 4 µA (typical)
– Auto Low Power Mode: 4 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Block-Erase Capability
– Uniform 64 KByte blocks
• Fast Read Access Time:
– 55 ns for SST39LF080
– 70 and 90 ns for SST39VF080
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
15 seconds (typical) for SST39LF/VF080
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 40-lead TSOP (10mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
PRODUCT DESCRIPTION
The SST39LF/VF080 devices are 1M x8 CMOS Multi-Pur-
pose Flash (MPF) manufactured with SST’s proprietary,
high-performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39LF080 write (Program or
Erase) with a 3.0-3.6V power supply. The SST39VF080
write (Program or Erase) with a 2.7-3.6V power supply.
They conform to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF/
VF080 devices provide a typical Byte-Program time of 14
µsec. The devices use Toggle Bit or Data# Polling to indi-
cate the completion of Program operation. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST39LF/VF080 devices are suited for applications
that require convenient and economical updating of pro-
gram, configuration, or data memory. For all system appli-
cations, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. They also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39LF/VF080 are offered in 40-lead TSOP and 48-
ball TFBGA packages. See Figures 1 and 2 for pin
assignments.
©2007 Silicon Storage Technology, Inc.
S71146-07-EOL
6/07
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
|
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8 Mbit Multi-Purpose Flash
SST39LF080 / SST39VF080
www.DataSheet4U.com
A16
A15
A14
A13
A12
A11
A9
A8
WE#
NC
NC
NC
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Standard Pinout
Top View
Die Up
FIGURE 1: Pin Assignments for 40-lead TSOP
40 A17
39 VSS
38 NC
37 A19
36 A10
35 DQ7
34 DQ6
33 DQ5
32 DQ4
31 VDD
30 VDD
29 NC
28 DQ3
27 DQ2
26 DQ1
25 DQ0
24 OE#
23 VSS
22 CE#
21 A0
1146 F01.3
TOP VIEW (balls facing down)
6
A14 A13 A15 A16 A17 NC NC VSS
5
A9 A8 A11 A12 A19 A10 DQ6 DQ7
4
WE# NC NC NC DQ5 NC VDD DQ4
3
NC NC NC NC DQ2 DQ3 VDD NC
2
A7 A18 A6 A5 DQ0 NC NC DQ1
1
A3 A4 A2 A1 A0 CE# OE# VSS
ABCDEFGH
FIGURE 2: Pin Assignments for 48-ball TFBGA
EOL Data Sheet
©2007 Silicon Storage Technology, Inc.
5
S71146-07-EOL
6/07
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 39VF080 electronic component. |
| Information | Total 25 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. 8 Mbit, Multi-Purpose Flash Memory [ Learn More ] | |
| Download | [ 39VF080.PDF Datasheet ] | |
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