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PDF D1276 Data sheet ( Hoja de datos )
| Número de pieza | D1276 | |
| Descripción | NPN Transistor - 2SD1276 | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB0950 and 2SB0950A
■ Features
• High forward current transfer ratio hFE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage
www.DataShe(eEt4mUit.tceor mopen)
2SD1276 VCBO
2SD1276A
60
80
V
Collector-emitter voltage 2SD1276 VCEO
(Base open)
2SD1276A
60
80
V
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
TC = 25°C
VEBO
IC
ICP
PC
Junction temperature
Storage temperature
Tj
Tstg
5
4
8
40
2.0
150
−55 to +150
V
A
A
W
°C
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
B
C
■ Electrical Characteristics Ta = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1276 VCEO IC = 30 mA, IB = 0 60 V
(Base open)
2SD1276A
80
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
2SD1276
2SD1276A
VBE
ICBO
Collector-emitter cutoff
current (Base open)
2SD1276 ICEO
2SD1276A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1
hFE2 *
VCE(sat)1
VCE(sat)2
fT
ton
tstg
tf
VCE = 3 V, IC = 3 A
VCB = 60 V, IE = 0
VCB = 80 V, IE = 0
VCE = 30 V, IB = 0
VCE = 40 V, IB = 0
VEB = 5 V, IC = 0
VCE = 3 V, IC = 0.5 A
VCE = 3 V, IC = 3 A
IC = 3 A, IB = 12 mA
IC = 5 A, IB = 20 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 3 A, IB1 = 12 mA, IB2 = −12 mA,
VCC = 50 V
1 000
1 000
2.5 V
200 µA
200
500 µA
500
2 mA
10 000
2.0 V
4.0
20 MHz
0.5 µs
4.0 µs
1.0 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: February 2003
SJD00190BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D1276.PDF ] | |
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