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PDF EM641FT8S Data sheet ( Hoja de datos )
| Número de pieza | EM641FT8S | |
| Descripción | 512K x8 bit Low Power Full CMOS Static RAM | |
| Fabricantes | Emerging Memory & Logic Solutions | |
| Logotipo |  |
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Document Title
512K x8 bit Low Power Full CMOS Static RAM
EM641FT8S Series
Low Power, 512Kx8 SRAM
Revision History
Revision No.
0.0
www.DataSheet4U.com0.1
History
Initial Draft
0.1 Revision
IDR Current from 1.5uA to 7uA
tOE from 25nsec to 30nsec with 55ns part
Draft Date Remark
Nov. 20, 2007 Preliminary
Dec. 5, 2007
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
1 page  
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0V to VCC
Input Rise and Fall Time : 1V/ns
Input and Output reference Voltage : 0.5VCC
Output Load (See right) : CL1) = 100pF + 1 TTL (70ns)
Notes :
CL1) = 30pF + 1 TTL (45ns/55ns)
www.DataSh12e..eIRtn41cUl=.ucdo1im8n0g0socohpme,
and Jig capacitance
R2 = 990 ohm
3. VTM = VCC
4. CL = 5pF + 1 TTL (measurement with tLZ, tOLZ, tHZ, tOHZ, tWHZ)
EM641FT8S Series
Low Power, 512Kx8 SRAM
Output
CL1)
VTM3)
R12)
R22)
READ CYCLE (Vcc = 4.5V to 5.5V, GND = 0V, TA = -40oC to +85oC)
Parameter
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
45ns
Min Max
45 -
- 45
- 45
- 25
10 -
5-
0 20
0 15
10 -
55ns
Min Max
55 -
- 55
- 55
- 30
10 -
5-
0 20
0 20
10 -
70ns
Min Max
70 -
- 70
- 70
- 35
10 -
5-
0 25
0 25
10 -
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE (Vcc = 4.5V to 5.5V, GND = 0V, TA = -40oC to +85oC)
Parameter
Write cycle time
Chip select to end of write
Address setup time
Address valid to end of write
Write pulse width
Write recovery time
Write to ouput high-Z
Data to write time overlap
Data hold from write time
End of write to output low-Z
Symbol
tWC
tCW
tAS
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
45ns
Min Max
45 -
45 -
0-
45 -
35 -
0-
0 15
25
0-
5-
55ns
Min Max
55 -
45 -
0-
45 -
40 -
0-
0 20
25
0-
5-
70ns
Min Max
70 -
60 -
0-
60 -
50 -
0-
0 20
30
0-
5-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
5 Page 
EM641FT8S Series
Low Power, 512Kx8 SRAM
SRAM PART CODING SYSTEM
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
www.DataSheet4U2.c.omProduct Type
3. Density
4. Function
5. Technology
6. Operating Voltage
1. Memory Component
EM --------------------- Memory
2. Product Type
6 ------------------------ SRAM
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
4. Function
0 ----------------------- Dual CS
1 ----------------------- Single CS
2 ----------------------- Multiplexed
3 ------------- Single CS / LBB, UBB(tBA=tOE)
4 ------------- Single CS / LBB, UBB(tBA=tCO)
5 ------------- Dual CS / LBB, UBB(tBA=tOE)
6 ------------- Dual CS / LBB, UBB(tBA=tCO)
5. Technology
F ------------------------- Full CMOS
6. Operating Voltage
T ------------------------- 5.0V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
11. Power
10. Speed
9. Package
8. Generation
7. Organization
7. Organization
8 ---------------------- x8 bit
16 ---------------------- x16 bit
8. Generation
Blank ----------------- 1st generation
A ----------------------- 2nd generation
B ----------------------- 3rd generation
C ----------------------- 4th generation
D ----------------------- 5th generation
E ----------------------- 6th generation
F ----------------------- 7th generation
G ---------------------- 8th generation
9. Package
Blank ---------------- KGD, 48&36FpBGA
S ---------------------- 32 sTSOP1
T ---------------------- 32 TSOP1
U ---------------------- 44 TSOP2
V --------------------- 32 SOP
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 ---------------------- 100ns
12 ---------------------- 120ns
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free & Green)
L ---------------------- Low Power
S ---------------------- Standard Power
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet EM641FT8S.PDF ] | |
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