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PDF EM640FV16FW Data sheet ( Hoja de datos )
| Número de pieza | EM640FV16FW | |
| Descripción | 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM | |
| Fabricantes | Emerging Memory & Logic Solutions | |
| Logotipo |  |
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Document Title
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
www.DataSheet4U.com
EM640FV16FW Series
Low Power, 256Kx16 SRAM
Draft Date
August 13 , 2003
Remark
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
1 page  
EM640FV16FW Series
Low Power, 256Kx16 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Symbol
Min
Supply voltage
Ground
Input high voltage
VCC
VSS
VIH
2.7
0
2.2
Input low voltage
www.DataSheet4U.com
VIL -0.23)
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f =1MHz, TA=25oC)
Typ
Max
Unit
3.3 3.6 V
0 0V
-
VCC + 0.22)
V
- 0.6 V
Item
Input capacitance
Input/Ouput capacitance
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Average operating current
Output low voltage
Output high voltage
Standby Current (TTL)
Standby Current (CMOS)
Symbol
Test Conditions
ILI VIN=VSS to VCC
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH
VIO=VSS to VCC
ICC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL
ICC1
Cycle time=1µs, 100% duty, IIO=0mA,
CS1<0.2V, LB<0.2V or/and UB<0.2V, CS2>VCC-0.2V,
VIN<0.2V or VIN>VCC-0.2V
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL ,
VIN=VIL or VIH
55ns
70ns
VOL IOL = 2.1mA
VOH IOH = -1.0mA
ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
ISB1
CS1>VCC-0.2V, CS2>VCC-0.2V (CS1 controlled)
or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0~VCC
(Typ. condition : VCC=3.3V @ 25oC)
(Max. condition : VCC=3.6V @ 85oC)
LL
Min Typ Max
-1 - 1
-1 - 1
- -3
- -3
- - 30
- - 25
- - 0.4
2.4 -
-
- - 0.3
- 11) 12
Unit
uA
uA
mA
mA
mA
mA
V
V
mA
uA
NOTES
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
5
5 Page 
EM640FV16FW Series
Low Power, 256Kx16 SRAM
MEMORY FUNCTION GUIDE
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
www.DataSheet4U2.c.omDevice Type
3. Density
4. Option
5. Technology
6. Operating Voltage
11. Power
10. Speed
9. Packages
8. Version
7. Orgainzation
1. Memory Component
2. Device Type
6 ------------------------ Low Power SRAM
7 ------------------------ STRAM
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
16 ----------------------- 16M
32 ----------------------- 32M
64 ----------------------- 64M
4. Mode Option
0 -------- Dual CS
1 -------- Single CS
2 -------- Multiplexed Address
3 -------- Single CS with LB,UB (tBA=tOE)
4 -------- Single CS with LB,UB (tBA=tCO)
5 -------- Dual CS with LB,UB (tBA=tOE)
6 -------- Dual CS with LB,UB (tBA=tCO)
5. Technology
Blank ------------------ CMOS
F ------------------------ Full CMOS
6. Operating Voltage
Blank ------------------- 5V
V ------------------------- 2.7V~3.6V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
7. Orginzation
8 ---------------------- x8 bit
16 ---------------------- x16 bit
32 ---------------------- x32 bit
8. Version
Blank ----------------- Mother Die
A ----------------------- First revision
B ----------------------- Second revision
C ----------------------- Third revision
D ----------------------- Fourth revision
E ----------------------- Fifth revision
F ----------------------- Sixth revision
9. Package
Blank ---------------------- FPBGA
S ---------------------------- 32 sTSOP1
T ---------------------------- 32 TSOP1
U ---------------------------- 44 TSOP2
W ---------------------------- Wafer
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 --------------------- 100ns
12 --------------------- 120ns
11. Power
LL ---------------------- Low Low Power
L ---------------------- Low Power
S ---------------------- Standard Power
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet EM640FV16FW.PDF ] | |
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