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Panasonic Semiconductor - NPN Transistor - 2SD1992A

Numéro de référence D1992A
Description NPN Transistor - 2SD1992A
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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D1992A fiche technique
Transistors
2SD1992A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1321A
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
I Features
Low collector to emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
0.65 max.
www.DataShIeetA4Ub.scoomlute Maximum Ratings Ta = 25°C
0.45+−00..105
2.5±0.5 2.5±0.5
123
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
50
7
1
500
600
150
55 to +150
V
V
V
A
mA
mW
°C
°C
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
1.2±0.1
0.45+−00..105
0.65
max.
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage *1
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1 *2
hFE2 *1
VCE(sat)
fT
Cob
VCB = 20 V, IE = 0
VCE = 20 V, IB = 0
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 500 mA
IC = 300 mA, IB = 30 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
60
50
7
85
40
0.1
1
340
90
0.35 0.6
200
6 15
µA
µA
V
V
V
V
MHz
pF
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no indication for rank.
1

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