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Numéro de référence | GP5936 | ||
Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | GTM CORPORATION | ||
Logo | |||
Pb Free Plating Product
ISSUED DATE :2005/11/14
REVISED DATE :
GP5936
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-40V
40m
-5.5A
Description
The GP5936 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Simple Drive Requirement
*Lower On-resistance
www.DataSheet4*UF.acosmt Switching Characteristic
Package Dimensions
D
GAUGE PLANE
SEATING PLANE
ZZ
be
b
SECTION Z - Z
DIP-8
REF.
A
A1
A2
b
b1
b2
b3
c
Millimeter
Min. Max.
- 0.5334
0.381
-
2.921
4.953
0.356
0.559
0.356
0.508
1.143
1.778
0.762
1.143
0.203
0.356
REF.
c1
D
E
E1
e
HE
L
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-40
±25
-5.5
-4.5
-30
2
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.203
0.279
9.017
10.16
6.096
7.112
7.620
8.255
2.540 BSC
- 10.92
2.921
3.810
Unit
V
V
A
A
A
W
W/
Unit
/W
GP5936
Page: 1/4
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Pages | Pages 4 | ||
Télécharger | [ GP5936 ] |
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