PDF W29C102 Data sheet ( Hoja de datos )

Número de pieza	W29C102
Descripción	64K 16 CMOS FLASH MEMORY
Fabricantes	Winbond
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No Preview Available ! W29C102 64K × 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C102 results in fast program/erase operations www.DataSheet4U.comwith extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES • Single 5-volt program and erase operations • Fast page-write operations − 128 words per page − Page program cycle: 10 mS (max.) − Effective word-program cycle time: 39 µS − Optional software-protected data write • Fast chip-erase operation: 50 mS • Read access time: 70/90/120 nS • Typical page program/erase cycles: 1K/10K • Ten-year data retention • Software and hardware data protection • Low power consumption − Active current: 25 mA (typ.) − Standby current: 20 µA (typ.) • Automatic program timing with internal VPP generation • End of program detection − Toggle bit − Data polling • Latched address and data • TTL compatible I/O • JEDEC standard word-wide pinouts • Available packages: 40-pin 600 mil DIP, TSOP and 44-pin PLCC Publication Release Date: March 1998 - 1 - Revision A3 1 page W29C102 TABLE OF OPERATING MODES Operating Mode Selection (VHH = 12V) MODE PINS CE OE WE ADDRESS Read www.DataSheet4U.com Write VIL VIL VIH AIN VIL VIH VIL AIN Standby VIH X X X Write Inhibit X VIL X X X X VIH X Output Disable X VIH X X 5-Volt Software Chip Erase VIL VIH VIL AIN Product ID VIL VIL VIH A0 = VIL; A1−A15 = VIL; A9 = VHH VIL VIL VIH A0 = VIH; A1−A15 = VIL; A9 = VHH DQ. Dout Din High Z High Z/DOUT High Z/DOUT High Z DIN Manufacturer Code 00DA (Hex) Device Code 004F (Hex) Publication Release Date: March 1998 - 5 - Revision A3 5 Page W29C102 AC Characteristics, continued Read Cycle Timing Parameters (VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C) PARAMETER SYM. W29C102-70 W29C102-90 W29C102-12 UNIT MIN. MAX. MIN. MAX. MIN. MAX. Read Cycle Time www.DataSheet4U.comChip Enable Access Time TRC 70 - 90 - 120 - nS TCE - 70 - 90 - 120 nS Address Access Time TAA - 70 - 90 - 120 nS Output Enable Access Time TOE - 35 - 45 - 60 nS CE High to High-Z Output TCHZ - 25 - 25 - 30 nS OE High to High-Z Output TOHZ - 25 - 25 - 30 nS Output Hold from Address Change TOH 0 - 0 - 0 - nS Byte/Page-write Cycle Timing Parameters PARAMETER SYMBOL Write Cycle (erase and program) TWC Address Setup Time TAS Address Hold Time TAH WE and CE Setup Time TCS WE and CE Hold Time TCH OE High Setup Time TOES OE High Hold Time TOEH CE Pulse Width TCP WE Pulse Width TWP WE High Width TWPH Data Setup Time TDS Data Hold Time TDH Byte Load Cycle Time TBLC MIN. - 0 50 0 0 0 0 70 70 100 50 0 - TYP. - - - - - - - - - - - - - Notes: All AC timing signals observe the following guidelines for determining setup and hold times: (a) High level signal's reference level is VIH. (b) Low level signal's reference level is VIL. MAX. 10 - - - - - - - - - - - 150 UNIT mS nS nS nS nS nS nS nS nS nS nS nS µS - 11 - Publication Release Date: March 1998 Revision A3 11 Page

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