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PDF C461 Data sheet ( Hoja de datos )
| Número de pieza | C461 | |
| Descripción | NPN Transistor - 2SC461 | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C461 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
www.DataSheAet4cUc.coormdingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
2SC460, 2SC461
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector to base
breakdown voltage
V(BR)CBO
Collector to emitter
breakdown voltage
V(BR)CEO
Emitter to base
breakdown voltage
V(BR)EBO
Collector cutoff current ICBO
Emitter cutoff current IEBO
Base to emitter voltage VBE
www.DaDtaCShceuertr4eUn.tctormansfer ratio hFE*1
Collector to emitter
saturation voltage
VCE(sat)
Gain bandwidth product fT
Collector output
capacitance
Cob
10.7 MHz power gain PG
2SC460
Min Typ
30 —
30 —
5—
——
——
— 0.63
35 —
— 0.6
— 230
— 1.8
26 29
Max
—
—
—
0.5
0.5
0.75
200
1.1
—
3.5
—
2SC461
Min Typ
30 —
30 —
5—
——
——
— 0.63
35 —
— 0.6
— 230
— 1.8
——
100 MHz power gain PG
— — — 13 17
Noise figure
NF — 2.0 — — —
Note: 1. The 2SC460 and 2SC461 are grouped by hFE as follows.
A BC
35 to 70
60 to 120 100 to 200
Max Unit Test conditions
—V
IC = 10 µA, IE = 0
—V
IC = 1 mA, RBE =
—V
IE = 10 µA, IC = 0
0.5 µA
0.5 µA
0.75 V
200
1.1 V
VCB = 18 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
— MHz VCE = 12 V, IC = 2 mA
3.5 pF
VCB = 10 V, IE = 0,
f = 1 MHz
— dB VCE = 6 V, IE = –1 mA
f = 10.7 MHz
— dB VCE = 6 V, IE = –1 mA
f = 100 MHz
— dB VCE = 6 V, IE = –1 mA
f = 1MHz
Rg = 500Ω
5 Page 
Transfer Admittance vs.
Collector Current
500
VCE = 6 V
f = 4.5 MHz
200
bfe gfe
100 bre
bre
50
20 gfe
10
0.1
bfe
0.2 0.5
1.0
2
www.DataSheet4U.com Collector Current IC (mA)
5
Input/Output Admittance vs.
Collector Current
500
VCE = 6 V
f = 10.7 MHz
200
gie goe
100 bie
50 boe
gie
20 goe
bie boe
10
0.1
0.2 0.5 1.0 2
Collector Current IC (mA)
5
2SC460, 2SC461
Input/Output Admittance vs.
Collector to Emitter Voltage
500
200 goe boe
IC = 1 mA
f = 10.7 MHz
100 gie
50
bie
gie
bie
goe boe
20
10
1
2
5 10 20
50
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
500
200 bre
bfe
100 gie
50
IC = 1 mA
f = 10.7 MHz
gbifee
bre
20
10
1
2
5 10 20
50
Collector to Emitter Voltage VCE (V)
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet C461.PDF ] | |
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