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PDF K1359 Data sheet ( Hoja de datos )

Número de pieza K1359
Descripción MOSFET ( Transistor ) - 2SK1359
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! K1359 Hoja de datos, Descripción, Manual

2SK1359
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1359
DCDC Converter and Motor Drive Applications
z Low drainsource ON resistance : RDS (ON) = 3.0 (typ.)
z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
z Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
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Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
1000
1000
±30
5
15
125
150
55~150
V
V
V
A
W
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.0 °C / W
50 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-09

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K1359 pdf
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2SK1359
5 2006-11-09

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