DataSheetWiki


K3397 fiches techniques PDF

Toshiba - MOSFET ( Transistor ) - 2SK3397

Numéro de référence K3397
Description MOSFET ( Transistor ) - 2SK3397
Fabricant Toshiba 
Logo Toshiba 





1 Page

No Preview Available !





K3397 fiche technique
2SK3397
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3397
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
z Low drain-source ON resistance: RDS (ON) = 4.0 m(typ.)
z High forward transfer admittance: |Yfs| = 110 S (typ.)
z Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
www.DataSheetz4U.coEmnhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
70
210
125
273
70
12.5
150
55 to150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 40 μH, IAR = 70 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
4
3
1 2006-11-16

PagesPages 6
Télécharger [ K3397 ]


Fiche technique recommandé

No Description détaillée Fabricant
K3396 MOSFET ( Transistor ) - 2SK3396 Panasonic Semiconductor
Panasonic Semiconductor
K3397 MOSFET ( Transistor ) - 2SK3397 Toshiba
Toshiba

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche