|
|
PDF TC190 Data sheet ( Hoja de datos )
| Número de pieza | TC190 | |
| Descripción | System ASIC | |
| Fabricantes | Toshiba | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TC190 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
TOSHIBA
System ASIC
TC190 Series CMOS ASICs
0.6µ 3.0/3.3V ASIC Family
The 0.6µm, 5V TC190 ASIC series provides higher system per-
formance and device integration with lower power than previous
generation 5V families. Highly accurate delay models, area effi-
cient memory cells and a very fine pitch TAB bonding capability
for high I/O requirements are some of the features of the family
which consists of Gate Array (TC190G), Embedded Array
(TC190E) and Standard Cell (TC190C) ASIC products. The
www.DataShTeCet14U90.cEomis a gate array based product that incorporates the ability
to embed large diffused cell based hardmacrocells and com-
pilable cells (RAM, ROM, DAC, multipliers, PLLs, etc) rather
than building metalized functions. This enables denser, faster,
higher performance ASICS to be designed while still exhibiting
quick “gate array” type turn around times.
Benefits
– Advanced 0.6µ micron CMOS process with fast 240 gate
delays.
– Reduction of gate power by as much as 20 percent over 0.8µm
ASICs.
– 707,000 usable gates provide high levels of integration for
improved performance and board area savings.
– Extensive libraries with a wide range of macrocells,
compilable cells and megacells availible.
– Library compatible with existing TC160G/170G gate arrays for
ease of design migration to 0.6µm technology
– Design Kit support for a wide range of EDA environments.
– VERILOG-XL sign off capability.
– 62µ TAB pad pitch allows higher number of I/O per gate than
previous product generations.
– A wide range of packages are availible, including heat spreader
plastic QFP, TABFP, BGA, tape BGA and others.
– New accurate delay modeling
– Verilog sign-off
System Performance
The high density, high performance TC190 series ASIC family is
manufactured using Toshiba’s 0.6µm double and triple layer
complimentary metal-oxide silicon process. This family provides
sub-micron ASIC density for pure 5V applications, and applica-
tions that are developed to transition over time to 3V. Typical
applications are PC chipsets, graphics, telecommunications, net-
works, set top boxes and systems designed to migrate from 5V to
3V.
The 707K usable gates allow previously unobtainable levels
of integration to be achieved on a 5V ASIC. The TC190 series
supports many complex functions such as multipliers, DACs,
ADCs,RAM, ROM and FIFOs.
The TC190 series offers Toshiba’s high quality and high
capacity manufacturing expertise. A partnership with Toshiba
brings you not only the high quality and reliability ASICs, but
fast prototype turnaround (3 day for gate array), steep production
ramp-up and proven high volume manufacturing capacity.
Packaging
The TC190 series wide range of packaging options provide a
packaging solution for any requirement. New packages are con-
tinuously being developed. Contact your Toshiba sales represen-
tative for the Toshiba Packaging Book for specific package/pin
count information.
Features
TC190G
TC190E/C
– 22K – 707K usable gates
up to 730K
– 14 standard master sizes
21 standard master sizes
– up to 512 wire bonds
Same
– up to 776 TAB bond pads
– 62µ Inner lead bond pads
Same
– Typical core power – 2.63µW/gate/Mhz
– 180+ primitive cells
(scan, standard, high drive cells)
Same
– 450+ I/O cells including (hign drive
{24mA} slew rate control high
speed output buffers)
Compiled cells – sync/async
single, dual, triple port RAM, ROM
Same
Same
– Hard macrocells including those for PCI
bus interface are availible. Some fast
multipliers, adders, ALUs, UARTS timers
and special I/O cells are in development.
– Ability to embed large Compilable, fully
diffused memory blocks provide higher
performance and increased desnsity.
Same
TC190G Two Input NAND Gate Delay Performance
ND2 Gate Delay1
Typical2
Worst Case3
Fanout = 2
240ps
406ps
Fanout = 4
336ps
568ps
Fanout = 6
432ps
731ps
Power Dissipation
at 5V
Power = 2.63µW/gate/MHz
NOTE 1: These typical numbers are for estimation purposes only. Power dissap-
ation is dependent on wire loading and gate switching rates.
Product Brief
TOSHIBA Corporation
1
1 page  
www.DataSheet4U.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TC190.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TC190 | System ASIC | Toshiba |
| TC19Gxxx | (TC15G0xx / TC17Gxxx / TC19Gxxx) CMOS Gate Array | Toshiba |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |