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PDF 05N03LAG Data sheet ( Hoja de datos )
| Número de pieza | 05N03LAG | |
| Descripción | IPU05N03LAG | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 05N03LAG (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
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• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPD05N03LA G IPF05N03LA G
IPS05N03LA G IPU05N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
5.1 mΩ
50 A
Type
Type
IPD05N03LA
IPF05N03LA
IPPaSc0k5aNg0e3LA
IMPaUr0k5inNg03LA
IPD05N03LA
IPF05N03LA
Package
Ordering Code
P-TO252-3-11 Q67042-S4144
P-TO252-3-23 Q67042-S
P-TOP2-5T2O-32-5111-3-11 P-QT6O7205422--3S-23
05N0P3-LTAO251-3-21 05QN60730L4A2-S4230
IPS05N03LA
Marking
05N03LA
05N03LA
05PN-T0O3L2A51-3-11
050N5N030L3ALA
IPU05N03LA
P-TO251-3-1
05N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=45 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
50
350
300
6
±20
94
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.0
page 1
2006-05-11
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
10 V
90
4.5 V
4.1 V
IPD05N03LA G IPF05N03LA G
IPS05N03LA G IPU05N03LA G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
18 3 V 3.2 V
3.5 V
3.8 V
4.1 V
80 16
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70
60
3.8 V
14
12
50
40
30
20
10
0
0
3.5 V
12
V DS [V]
3.2 V
3V
2.8 V
3
10
8
6
4
2
0
0
4.5 V
10 V
20 40 60 80 100
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
70
80
60
60 50
40
40
30
20
175 °C
25 °C
20
10
0
012345
V GS [V]
0
0 10 20 30 40 50 60
I D [A]
Rev. 2.0
page 5
2006-05-11
5 Page 
Package Outline
PG-TO251-3-11: Outline
PG-TO251-3-21
IPD05N03LA G IPF05N03LA G
IPS05N03LA G IPU05N03LA G
www.DataSheet4U.com
PG-TO251-3-21: Outline
Rev. 2.0
page 11
2006-05-11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 05N03LAG.PDF ] | |
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