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Datasheet H45N03E-PDF.HTML Equivalent ( PDF )

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N.º Número de pieza Descripción Fabricantes Catagory
1H45N03EN-Channel Enhancement-Mode MOSFET

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200518 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H45N03E N-Channel Enhancement-Mode MOSFET (25V, 45A) H45N03E Pin Assignment Tab Features • RDS(on)=15mΩ@VGS=10V, ID=25A • RDS(on)=20mΩ@VGS=4.5V, ID=25A www.DataShee
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
mosfet
2H45TBXXPHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR H45TBXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage Repetitive peak off-stage voltage Repetitive peak reverse current Repetitive peak off-state current Rep. rate of ch
Hind Rectifiers
Hind Rectifiers
thyristor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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