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Huandong - Silicon PNP Power Transistors

Numéro de référence 2SA1117
Description Silicon PNP Power Transistors
Fabricant Huandong 
Logo Huandong 





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2SA1117 fiche technique
Huandong Electronics
Silicon PNP Power Transistors
Product Specification
2SA1117
DESCRIPTION
With TO-3 package
High power dissipations
APPLICATIONS
For power switching amplifier and
www.DataSheet4U.gcoemneral purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-200
-200
-6
-17
-5
200
150
-65~150
UNIT
V
V
V
A
A
W

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