|
|
PDF IHW15N120R2 Data sheet ( Hoja de datos )
| Número de pieza | IHW15N120R2 | |
| Descripción | Reverse Conducting IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IHW15N120R2 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
IHW15N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
www.DataSheet•4U.coCmomplete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
Marking
IHW15N120R2 1200V 20A
1.5V
175°C H15R1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Mounting Torque
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Ms
C
G
E
PG-TO-247-3-21
Package
PG-TO-247-3-21
Value
1200
30
15
45
45
30
15
45
50
130
120
±20
±25
357
-40...+175
-55...+175
260
0.6
Unit
V
A
V
W
°C
Nm
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1 Feb. 06
1 page  
IHW15N120R2
Soft Switching Series
40A
30A
www.DataSheet4U.com
20A
10A
VGE=20V
15V
13V
11V
9V
7V
0A
0V 1V 2V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
40A
VGE=20V
15V
30A 13V
11V
9V
20A 7V
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
40A
TJ=175°C
30A 25°C
20A
10A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=30A
2.0V
1.5V
1.0V
IC=15A
IC=7.5A
0.5V
0.0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE =15V)
Power Semiconductors
5
Rev. 1 Feb. 06
5 Page 
www.DataSheet4U.com
IHW15N120R2
Soft Switching Series
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
rrm
t
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =39pF.
Power Semiconductors
11
Rev. 1 Feb. 06
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IHW15N120R2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IHW15N120R | Reverse Conducting IGBT with monolithic body diode |  Infineon Technologies |
| IHW15N120R2 | Reverse Conducting IGBT | Infineon |
| IHW15N120R3 | Reverse conducting IGBT | Infineon Technologies |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |