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Sanyo Semicon Device - NPN Transistor - 2SC3779

Numéro de référence C3779
Description NPN Transistor - 2SC3779
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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C3779 fiche technique
Ordering number:ENN1954C
NPN Epitaxial Planar Silicon Transistor
2SC3779
UHF Low-Noise Amplifier,
Wide-Band Amplifier Applications
Applications
· UHF low-noise amplifiers, wide-band amplifiers.
Features
· Small noise figure : NF=1.5dB typ (f=0.9GHz).
· High power gain : MAG=14dB typ (f=0.9GHz).
· High cutoff frequency : fT=5GHz typ.
Package Dimensions
unit:mm
2004B
[2SC3779]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1.3 1.3
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
* : The 2SC3779 is classified by 20mA hFE as follows :
VCB=12V, IE=0
VEB=2V, IC=0
VCE=10V, IC=20mA
VCE=10V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Rank
C
D
hFE 40 to 80 60 to 120
E
100 to 200
1 : Base
2 : Emitter
3 : Collector
SANYO : NP
Ratings
20
12
3
100
40
600
150
55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
1.0 µA
10 µA
40* 200*
5.0 GHz
1.0 pF
0.7 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62404TN (PC)/D0198HA (KT)/5318MO/3117AT, TS No.1954–1/5

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