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Galaxy Semi-Conductor - (S5820 - S5822) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Numéro de référence S5820
Description (S5820 - S5822) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Fabricant Galaxy Semi-Conductor 
Logo Galaxy Semi-Conductor 





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S5820 fiche technique
BL GALAXY ELECTRICAL
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIER
S5820---S5822
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 3.0 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
www.DataSheTeht4eUp.cloamstic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC SMC,molded plastic
Terminals: Solderable per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
SMC(DO-214AB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
S5820
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@TL=90
Peak forw ard surge current
VRRM
VRMS
VDC
IF(AV)
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage @ 3.0A
(Note 1)
@ 9.4A
IFSM
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Typical junction capacitance (Note2)
CJ
Typical thermal resistance (Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
20
14
20
0.475
0.85
S5821
30
21
30
3.0
80.0
0.50
0.90
2.0
20.0
250
20
- 55 ---- + 125
- 55 ---- + 150
S5822
40
28
40
UNITS
V
V
V
A
0.525
0.95
A
V
mA
pF
/W
www.galaxycn.com
Document Number 0281036
BLGALAXY ELECTRICAL
1.

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