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IPS12N03LBG fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPS12N03LBG
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPS12N03LBG fiche technique
Type
OptiMOS®2 Power-Transistor
Package
Marking
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
www.DataSheet4U.com
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPD12N03LB G
IPU12N03LB G
IPS12N03LB G
IPF12N03LB G
Product Summary
V DS
R DS(on),max
ID
30 V
11.6 m
30 A
Type
IPD12N03LB G
IPS12N03LB G
IPF12N03LB G
IPU12N03LB G
Package
Marking
PG-TO252-3-11
12N03LB
PG-TO251-3-11
12N03LB
PG-TO252-3-23
12N03LB
PG-TO251-3-1
12N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=30 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
30
30
120
64
6
±20
52
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.5
page 1
2006-05-15

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