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Toshiba Semiconductor - NPN Transistor - 2SD2604

Numéro de référence D2604
Description NPN Transistor - 2SD2604
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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D2604 fiche technique
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
2SD2604
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min)
Low saturation voltage: VCE (sat) = 1.5 V (max)
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Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 95 V
Collector-emitter voltage
VCEO
110 ± 15
V
Emitter-base voltage
VEBO 5 V
Collector current
DC
Pulse
IC
5
A
ICP 10
Base current
IB 0.7 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
5 kΩ ≈ 150
Emitter
1 2006-11-21

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