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Numéro de référence | GA250TD120U | ||
Description | HALF-BRIDGE IGBT DOUBLE INT-A-PAK | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Features
• Generation 4 IGBT technology
• Standard: Optimized for minimum saturation
www.DataSheet4U.com voltage and operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50054A
GA250TD120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 250A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
250
500
500
500
±20
2500
1250
650
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3S
Weight of Module
Typ.
—
—
0.1
—
—
400
Max.
0.10
0.20
—
4.0
3.0
—
Units
°C/W
N.m
g
1
4/24/2000
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Pages | Pages 10 | ||
Télécharger | [ GA250TD120U ] |
No | Description détaillée | Fabricant |
GA250TD120U | HALF-BRIDGE IGBT DOUBLE INT-A-PAK | International Rectifier |
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