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PDF P0903BSG Data sheet ( Hoja de datos )
| Número de pieza | P0903BSG | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | Niko | |
| Logotipo |  |
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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BSG
TO-263 (D2PAK)
Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 9.5mΩ
ID
50A
G
S
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAR
EAS
EAR
PD
Tj, Tstg
TL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
50
35
200
40
250
8.6
50
30
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1％
TYPICAL
0.6
MAXIMUM
2.5
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TC = 125 °C
LIMITS
MIN TYP MAX
UNIT
25
1 1.6
3
V
±250 nA
25
250 µA
1 Jun-29-2004
1 page  
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BSG
TO-263 (D2PAK)
Lead-Free
TO-263 (D2PAK) MECHANICAL DATA
Dimension
www.DataSheet4U.com
A
B
C
D
E
F
G
Min.
14.5
4.2
1.20
0.3
-0.102
8.5
mm
Typ.
15
2.8
0.4
9
Max.
15.8
4.7
1.35
0.5
0.203
9.5
Dimension
H
I
J
K
L
M
N
Min.
1.0
9.8
0.7
4.83
mm
Typ.
1.5
6.5
1.5
5.08
Max.
1.8
10.3
1.4
5.33
A
HG
K
5 Jun-29-2004
5 Page | ||
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| PDF Descargar | [ Datasheet P0903BSG.PDF ] | |
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